A New Hope in the Post-Silicon Era: Gallium-Doped Indium Oxide Transistor Born
As traditional silicon materials increasingly approach their physical limits, the semiconductor industry stands at a critical juncture of transformation. A research team from the University of Tokyo recently developed a new transistor based on gallium-doped indium oxide (InGaOx), which is expected to extend the life cycle of Moore’s Law in high-computation applications such as artificial intelligence and big data. This innovation may open a new chapter for transistor design in the post-silicon era.
2025-07-02
