Mastering Compound Semiconductor Polishing Technology: Achieving High Performance for Next-Generation Electronic Components
With the rapid development of 5G, electric vehicles, high-frequency radar, and advanced optoelectronic components, traditional silicon materials are increasingly struggling to meet performance demands. Compound semiconductors like Silicon Carbide (SiC), Gallium Nitride (GaN), and Gallium Arsenide (GaAs), due to their wide bandgap, high thermal conductivity, high frequency, and high-power characteristics, have become key materials for next-generation electronic components. However, compared to silicon wafers, the difficulty of polishing and surface treating these high-hardness materials has increased significantly, posing a major challenge to achieving component performance and improving mass production yield.