chemical vapor deposition of diamond monocrystalline
In 1994, Thomas R. Anthony et al. of GE filed U.S. Patent 5,437,891 (issued in 1995) stating that the growth rate of cubic facets (100) of polycrystalline diamonds can be increased by chemical vapor deposition (CVD). In particular, if a small amount (e.g., 1%) of air (78% nitrogen, 21% oxygen, 1% argon) is added to …
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