{"id":113455,"date":"2025-07-02T09:37:29","date_gmt":"2025-07-02T01:37:29","guid":{"rendered":"https:\/\/honwaygroup.com\/a-new-hope-in-the-post-silicon-era-gallium-doped-indium-oxide-transistor-born\/"},"modified":"2025-07-02T14:56:34","modified_gmt":"2025-07-02T06:56:34","slug":"a-new-hope-in-the-post-silicon-era-gallium-doped-indium-oxide-transistor-born","status":"publish","type":"post","link":"https:\/\/honwaygroup.com\/en\/a-new-hope-in-the-post-silicon-era-gallium-doped-indium-oxide-transistor-born\/","title":{"rendered":"A New Hope in the Post-Silicon Era: Gallium-Doped Indium Oxide Transistor Born"},"content":{"rendered":"\n

As traditional silicon materials increasingly approach their physical limits, the semiconductor industry stands at a critical juncture of transformation. A research team from the University of Tokyo recently developed a new transistor based on gallium-doped indium oxide (InGaOx), which is expected to extend the life cycle of Moore’s Law in high-computation applications such as artificial intelligence and big data. This innovation may open a new chapter for transistor design in the post-silicon era.<\/p>\n\n

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